IC DRAM 256MBIT PAR 60FBGA Product overview: MT47H64M4BP-37E:B TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M4BP-37E:
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 256Mb (64M x 4)
Access Time: 500 ps
Voltage - Supply: 1.7V ~ 1.9V
Package / Case: 60-FBGA
Supplier Device Package: 60-FBGA (8x12)
Temperature Range - Operating: 0°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 267 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0024
Mfr: Micron Technology Inc.
Base Product Number: MT47H64M4
SDRAM - DDR2 Memory IC 256Mb (64M x 4) Parallel 267MHz 500ps 60-FBGA (8x12)
SDRAM - DDR2 Memory IC 256Mb (64M x 4) Parallel 267MHz 500ps 60-FBGA (8x12)
IC DRAM 256MBIT PAR 60FBGA
SDRAM - DDR2 Memory IC 256Mbit Parallel 267 MHz 500 ps 60-FBGA (8x12)
IC DRAM 256MBIT PARALLEL 60FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H64M4BP-37E:B TR | 557-1290-1-ND | MT47H64M4BP-37E:B TR | MT47H64M4BP-37E:B TR | MT47H64M4BP-37E:B TR | |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.5000 ns | 0.5000 ns | 0.5000 ns | 0.5000 ns | ||
| Cycle Time | 15 ns | 15 ns | 15 ns | |||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
