Micron Technology, Inc. Memory MT46V64M8BN-6:D TR

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Description
IC DRAM 512MBIT PARALLEL 60FBGA

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Description
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IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT46V64M8BN-6:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V64M8BN-6:D TR
Integrated Circuits (ICs) - Memory - Memory MT46V64M8BN-6:D TR
IC DRAM 512MBIT PAR 60FBGA

IC DRAM 512MBIT PAR 60FBGA

Supplier's Site
Memory - MT46V64M8BN-6:D TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 167 MHz 700 ps 60-FBGA (10x12.5)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V64M8BN-6:D TR MT46V64M8BN-6:D TR MT46V64M8BN-6:D TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 512000 kbits 512000 kbits 512000 kbits
Cycle Time 0.7000 ns
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