Micron Technology, Inc. Memory MT47H64M16NF-25E AUT:M

Description
IC DRAM 1GBIT PARALLEL 84FBGA
Description
IC DRAM 1GBIT PARALLEL 84FBGA

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IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

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SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M16NF-25E AUT:M
Integrated Circuits (ICs) - Memory - Memory MT47H64M16NF-25E AUT:M
IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H64M16NF-25E AUT:M MT47H64M16NF-25E AUT:M MT47H64M16NF-25E AUT:M
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature -40 to 125 C (-40 to 257 F)
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