Manufacturer: Micron Technology Inc.
Packaging: Tray
Operating Temperature Range: 0°C ~ 85°C (TC)
Package: 92-VFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Family Name: MT47H64M16
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 92-FBGA (11x19)
Alternative Parts (Cross-Reference): HYB18T1G160AF-3.7; HYB18T1G160AFL-3.7; HY5PS1G1631ALFP-E3; HYB18TC1G160AF-5;
Introduction Date: January 27, 2004
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 267MHz 400ps 92-FBGA (11x19)
IC DRAM 1GBIT PAR 92FBGA
IC DRAM 1GBIT PARALLEL 92FBGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 267 MHz 400 ps 92-FBGA (11x19)
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT47H64M16BT-37E:A-ND | MT47H64M16BT-37E:A | MT47H64M16BT-37E:A | MT47H64M16BT-37E:A | |
| Product Name | Memory - SDRAM - MT47H64M16BT-37E:A | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | ||
| Cycle Time | 15 ns | 15 ns | |||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
