Micron Technology, Inc. Memory MT47H64M16BT-37E:A

Description
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 267MHz 400ps 92-FBGA (11x19)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 267MHz 400ps 92-FBGA (11x19)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H64M16BT-37E:A-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 267MHz 400ps 92-FBGA (11x19)

SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 267MHz 400ps 92-FBGA (11x19)

Buy Now Datasheet
Memory - SDRAM - MT47H64M16BT-37E:A -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H64M16BT-37E:A
Memory - SDRAM - MT47H64M16BT-37E:A
Manufacturer: Micron Technology Inc. Packaging: Tray Operating Temperature Range: 0°C ~ 85°C (TC) Package: 92-VFBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 1Gb (64M x 16) Access Time: 400ps Family Name: MT47H64M16 Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 267MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 92-FBGA (11x19) Alternative Parts (Cross-Reference): HYB18T1G160AF-3.7; HYB18T1G160AFL-3.7; HY5PS1G1631ALFP-E3; HYB18TC1G160AF-5; Introduction Date: January 27, 2004 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Tray
Operating Temperature Range: 0°C ~ 85°C (TC)
Package: 92-VFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Family Name: MT47H64M16
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 92-FBGA (11x19)
Alternative Parts (Cross-Reference): HYB18T1G160AF-3.7; HYB18T1G160AFL-3.7; HY5PS1G1631ALFP-E3; HYB18TC1G160AF-5;
Introduction Date: January 27, 2004
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - MT47H64M16BT-37E:A - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 267 MHz 400 ps 92-FBGA (11x19)

SDRAM - DDR2 Memory IC 1Gbit Parallel 267 MHz 400 ps 92-FBGA (11x19)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H64M16BT-37E:A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M16BT-37E:A
Integrated Circuits (ICs) - Memory - Memory MT47H64M16BT-37E:A
IC DRAM 1GBIT PAR 92FBGA

IC DRAM 1GBIT PAR 92FBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 92FBGA

IC DRAM 1GBIT PARALLEL 92FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H64M16BT-37E:A-ND MT47H64M16BT-37E:A MT47H64M16BT-37E:A MT47H64M16BT-37E:A
Product Name Memory Memory - SDRAM - MT47H64M16BT-37E:A Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Package Type 92-TFBGA BGA; 92-TFBGA BGA
Supply Voltage 1.7V ~ 1.9V 1.7 V ~ 1.9 V 1.7V ~ 1.9V 0degC ~ 85degC (TC)
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