Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Family Name: MT47H64M16
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 84-FBGA (8x12.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Alternative Parts (Cross-Reference): IS43DR16640B-3DBL-TR
Introduction Date: March 21, 2014
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
IC DRAM 1GBIT PARALLEL 84FBGA Product overview: MT47H64M16HR-25E:H from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M16HR-25E
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
IC DRAM 1GBIT PARALLEL 84FBGA
IC DRAM 1GBIT PARALLEL 84FBGA
IC DRAM 1GBIT PARALLEL 84FBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H64M16HR-25E:H | MT47H64M16HR-25E:H | MT47H64M16HR-25E:H | MT47H64M16HR-25E:H | MT47H64M16HR-25E:H | |
| Product Name | Memory - SDRAM - MT47H64M16HR-25E:H | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR2; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | |
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | ||
| Package Type | BGA; 84-FBGA (8x12.5) | BGA; Tray | BGA; 84-TFBGA | BGA | 84-TFBGA | |
| Supply Voltage | 1.7 V ~ 1.9 V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 0degC ~ 85degC (TC) | 1.7V ~ 1.9V |
