IC DRAM 2GBIT PARALLEL 60FBGA Product overview: MT47H256M8EB-25E:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H256M8EB-25E
SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 400MHz 400ps 60-FBGA (9x11.5)
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 2Gb (256M x 8)
Access Time: 400ps
Family Name: MT47H256M8
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 60-FBGA (9x11.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Alternative Parts (Cross-Reference): MEM2G08D2DABG-25I; HXB18T2G800AF-25D; HXB18T2G800AFL-25D; W972GG8JB-25;
Introduction Date: April 17, 2014
ECCN: EAR99
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
IC DRAM 2GBIT PARALLEL 60FBGA
DRAM, 256M X 8BIT, 0 TO 85DEG C; DRAM Type:DDR2; DRAM Density:2Gbit; DRAM Memory Configuration:256M x 8bit; Clock Frequency:400MHz; Memory Case Style:FBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)
IC DRAM 2GBIT PARALLEL 60FBGA
IC DRAM 2GBIT PARALLEL 60FBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H256M8EB-25E:C | 557-1588-ND | MT47H256M8EB-25E:C | 80AH8126 | MT47H256M8EB-25E:C | MT47H256M8EB-25E:C | MT47H256M8EB-25E:C | |
| Product Name | Memory IC and Storage Component | Memory | Memory - SDRAM - MT47H256M8EB-25E:C | Memory | Dram, 256M X 8Bit, 0 To 85Deg C; Dram Type Micron | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 2.5 ns | 0.4000 ns | 0.4000 ns | ||
| Cycle Time | 15 ns | 15 ns | ||||||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | |||
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits |
