Micron Technology, Inc. Memory MT47H64M16NF-25E:M

Description
IC DRAM 1GBIT PARALLEL 84FBGA
Request a Quote Datasheet
Description
IC DRAM 1GBIT PARALLEL 84FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

Supplier's Site Datasheet
Memory - MT47H64M16NF-25E:M-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-FBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-FBGA (8x12.5)

Buy Now Datasheet
Memory - SDRAM - MT47H64M16NF-25E:M -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H64M16NF-25E:M
Memory - SDRAM - MT47H64M16NF-25E:M
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 1Gb (64M x 16) Access Time: 400ps Family Name: MT47H64M16 Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 85°C (TC) Case / Package: 84-FBGA (8x12.5) Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 400MHz Alternative Parts (Cross-Reference): NT5TU64M16DE-ACI; NT5TU64M16DE-ADI; W971GG6JB-25I; Introduction Date: March 21, 2014 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2023 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Family Name: MT47H64M16
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 84-FBGA (8x12.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Alternative Parts (Cross-Reference): NT5TU64M16DE-ACI; NT5TU64M16DE-ADI; W971GG6JB-25I;
Introduction Date: March 21, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H64M16NF-25E:M - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT47H64M16NF-25E:M
Memory IC and Storage Component 774-MT47H64M16NF-25E:M
IC DRAM 1GBIT PARALLEL 84FBGA Product overview: MT47H64M16NF-25E:M from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M16NF-25E :M can be used for catalog matching and distributor lookup.

IC DRAM 1GBIT PARALLEL 84FBGA Product overview: MT47H64M16NF-25E:M from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M16NF-25E:M can be used for catalog matching and distributor lookup.

Supplier's Site
Dram, 64M X 16Bit, 0 To 85Deg C Rohs Compliant Micron - 25AK3654 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 64M X 16Bit, 0 To 85Deg C Rohs Compliant Micron
25AK3654
Dram, 64M X 16Bit, 0 To 85Deg C Rohs Compliant Micron 25AK3654
DRAM, 64M X 16BIT, 0 TO 85DEG C ROHS COMPLIANT: YES

DRAM, 64M X 16BIT, 0 TO 85DEG C ROHS COMPLIANT: YES

Supplier's Site
Dram, 64M X 16Bit, 0 To 85Deg C; Dram Type Micron - 80AH8135 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 64M X 16Bit, 0 To 85Deg C; Dram Type Micron
80AH8135
Dram, 64M X 16Bit, 0 To 85Deg C; Dram Type Micron 80AH8135
DRAM, 64M X 16BIT, 0 TO 85DEG C; DRAM Type:DDR2; DRAM Density:1Gbit; DRAM Memory Configuration:64M x 16bit; Clock Frequency:400MHz; Memory Case Style:TFBGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes

DRAM, 64M X 16BIT, 0 TO 85DEG C; DRAM Type:DDR2; DRAM Density:1Gbit; DRAM Memory Configuration:64M x 16bit; Clock Frequency:400MHz; Memory Case Style:TFBGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes

Supplier's Site
IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H64M16NF-25E:M - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M16NF-25E:M
Integrated Circuits (ICs) - Memory - Memory MT47H64M16NF-25E:M
IC DRAM 1GBIT PARALLEL 84FBGA

IC DRAM 1GBIT PARALLEL 84FBGA

Supplier's Site
Memory - MT47H64M16NF-25E:M - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H64M16NF-25E:M MT47H64M16NF-25E:M-ND 774-MT47H64M16NF-25E:M 25AK3654 80AH8135 MT47H64M16NF-25E:M MT47H64M16NF-25E:M MT47H64M16NF-25E:M
Product Name Memory Memory Memory - SDRAM - MT47H64M16NF-25E:M Memory IC and Storage Component Dram, 64M X 16Bit, 0 To 85Deg C Rohs Compliant Micron Dram, 64M X 16Bit, 0 To 85Deg C; Dram Type Micron Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SDRAM - DDR2; DRAM Chip DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz 400 MHz 400 MHz
Access Time 0.4000 ns 0.4000 ns 0.4000 ns 2.5 ns 0.4000 ns 0.4000 ns
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 2406906 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
5V Memory IC and Storage Component - 774-MT5C1008ECA55L883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Integrated Circuits (ICs) - Memory - Memory - 10415FC10 - Acme Chip Technology Co., Limited
Specs
Memory Category Volatile; SRAM Chip
Cycle Time 10 ns
Density 1 kbits
View Details
2 suppliers