IC DRAM 1GBIT PARALLEL 84FBGA Product overview: MT47H64M16NF-25E:M from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M16NF-25E
Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Family Name: MT47H64M16
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 85°C (TC)
Case / Package: 84-FBGA (8x12.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Alternative Parts (Cross-Reference): NT5TU64M16DE-ACI; NT5TU64M16DE-ADI; W971GG6JB-25I;
Introduction Date: March 21, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
DRAM, 64M X 16BIT, 0 TO 85DEG C ROHS COMPLIANT: YES
DRAM, 64M X 16BIT, 0 TO 85DEG C; DRAM Type:DDR2; DRAM Density:1Gbit; DRAM Memory Configuration:64M x 16bit; Clock Frequency:400MHz; Memory Case Style:TFBGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes
IC DRAM 1GBIT PARALLEL 84FBGA
IC DRAM 1GBIT PARALLEL 84FBGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
IC DRAM 1GBIT PARALLEL 84FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H64M16NF-25E:M | 25AK3654 | 80AH8135 | MT47H64M16NF-25E:M | MT47H64M16NF-25E:M | MT47H64M16NF-25E:M | MT47H64M16NF-25E:M | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H64M16NF-25E:M | Dram, 64M X 16Bit, 0 To 85Deg C Rohs Compliant Micron | Dram, 64M X 16Bit, 0 To 85Deg C; Dram Type Micron | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | SDRAM - DDR2; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 2.5 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | ||
| Cycle Time | 15 ns | 15 ns | ||||||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | ||||
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits |
