Micron Technology, Inc. Memory MT46V64M8P-75 L:D

Description
IC DRAM 512MBIT PARALLEL 66TSOP
Description
IC DRAM 512MBIT PARALLEL 66TSOP

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Product
Description
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IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site
Memory - MT46V64M8P-75 L:D - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

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Integrated Circuits (ICs) - Memory - Memory - MT46V64M8P-75 L:D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V64M8P-75 L:D
Integrated Circuits (ICs) - Memory - Memory MT46V64M8P-75 L:D
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V64M8P-75 L:D MT46V64M8P-75 L:D MT46V64M8P-75 L:D
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7500 ns 0.7500 ns
Density 512000 kbits 512000 kbits 512000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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