Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46V64M8BN-75 L:D

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Description
IC DRAM 512MBIT PARALLEL 60FBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT46V64M8BN-75 L:D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V64M8BN-75 L:D
Integrated Circuits (ICs) - Memory - Memory MT46V64M8BN-75 L:D
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Memory - MT46V64M8BN-75 L:D - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V64M8BN-75 L:D MT46V64M8BN-75 L:D MT46V64M8BN-75 L:D
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 0.7500 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 2.3V ~ 2.7V
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