IC DRAM 512MBIT PARALLEL 84FBGA Product overview: MT47H32M16NF-25E IT:H from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H32M16NF-25E
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 400MHz 400ps 84-FBGA (8x12.5)
Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 400ps
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 84-FBGA (8x12.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Alternative Parts (Cross-Reference): MT47H32M16NF-25EIT:H
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
FBGA-84 DDR SDRAM ROHS
DRAM, 32M X 16BIT, -40 TO 95DEG C; DRAM Type:DDR2; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:400MHz; Memory Case Style:TFBGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes
IC DRAM 512MBIT PARALLEL 84FBGA
IC DRAM 512MBIT PARALLEL 84FBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
IC DRAM 512MBIT PARALLEL 84FBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Utmel Electronic Limited | Newark, An Avnet Company | Lingto Electronic Limited | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H32M16NF-25E IT:H | MT47H32M16NF-25EIT:H-ND | 17945-MT47H32M16NF-25E IT:H | 80AH8129 | MT47H32M16NF-25E IT:H | MT47H32M16NF-25E IT:H | MT47H32M16NF-25E IT:H | MT47H32M16NF-25E IT:H | |
| Product Name | Memory IC and Storage Component | Memory | Memory - SDRAM - MT47H32M16NF-25E IT:H | FBGA-84 DDR SDRAM ROHS | Dram, 32M X 16Bit, -40 To 95Deg C; Dram Type Micron | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 2.5 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | |||
| Cycle Time | 15 ns | ||||||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 85 C (-40 to 185 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | ||||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
