IC DRAM 1GBIT PARALLEL 84FBGA Product overview: MT47H64M16NF-25E XIT:M from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M16NF-25E
Manufacturer: Micron Technology Inc.
Operating Temperature Range: -40°C ~ 95°C (TC)
Features: SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
Package: Bulk
Package: 84-TFBGA
Mounting: Surface Mount
Family Name: MT47H64M16
Categories: Integrated Circuits (ICs)
Case / Package: 84-FBGA (8x12.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Balance
Quantity per package: 1368
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0032
IC DRAM 1GBIT PARALLEL 84FBGA
IC DRAM 1GBIT PARALLEL 84FBGA
DRAM, 64M X 16BIT, -40 TO 95DEG C; DRAM Type:DDR2; DRAM Density:1Gbit; DRAM Memory Configuration:64M x 16bit; Clock Frequency:400MHz; Memory Case Style:TFBGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
IC DRAM 1GBIT PARALLEL 84FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H64M16NF-25E XIT:M | MT47H64M16NF-25E XIT:M | MT47H64M16NF-25E XIT:M | 80AH8134 | MT47H64M16NF-25E XIT:M | MT47H64M16NF-25E XIT:M | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H64M16NF-25E XIT:M | Integrated Circuits (ICs) - Memory - Memory | Memory | Dram, 64M X 16Bit, -40 To 95Deg C; Dram Type Micron | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR2; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 2.5 ns | 0.4000 ns | 0.4000 ns | ||
| Cycle Time | 15 ns | 15 ns | |||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |||
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits |
