Micron Technology, Inc. Memory MT47H128M4CB-3:B

Description
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 333MHz 450ps 60-FBGA
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 333MHz 450ps 60-FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H128M4CB-3:B-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 333MHz 450ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 333MHz 450ps 60-FBGA

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H128M4CB-3:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M4CB-3:B
Integrated Circuits (ICs) - Memory - Memory MT47H128M4CB-3:B
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
Memory - MT47H128M4CB-3:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-FBGA

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H128M4CB-3:B-ND MT47H128M4CB-3:B MT47H128M4CB-3:B MT47H128M4CB-3:B
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-FBGA BGA BGA; 60-FBGA
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