Micron Technology, Inc. Memory MT47H128M8CF-25E IT:H

Description
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H128M8CF-25EIT:H-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-FBGA (8x10)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H128M8CF-25E IT:H - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT47H128M8CF-25E IT:H
Memory IC and Storage Component 774-MT47H128M8CF-25E IT:H
IC DRAM 1GBIT PARALLEL 60FBGA Product overview: MT47H128M8CF-25E IT:H from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H128M8CF-25E IT:H can be used for catalog matching and distributor lookup.

IC DRAM 1GBIT PARALLEL 60FBGA Product overview: MT47H128M8CF-25E IT:H from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H128M8CF-25E IT:H can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - SDRAM - MT47H128M8CF-25E IT:H -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H128M8CF-25E IT:H
Memory - SDRAM - MT47H128M8CF-25E IT:H
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 1Gb (128M x 8) Access Time: 400ps Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 95°C (TC) Case / Package: 60-FBGA (8x10) Supply Voltage - Operating: 1.7 V to 1.9 V Memory Format: DRAM Max Frequency: 400MHz Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (128M x 8)
Access Time: 400ps
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 95°C (TC)
Case / Package: 60-FBGA (8x10)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 400MHz
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H128M8CF-25E IT:H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M8CF-25E IT:H
Integrated Circuits (ICs) - Memory - Memory MT47H128M8CF-25E IT:H
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 1G PARALLEL 60FBGA - 533-MT47H128M8CF-25E IT:H - Utmel Electronic Limited
Hong Kong, China
IC DRAM 1G PARALLEL 60FBGA
533-MT47H128M8CF-25E IT:H
IC DRAM 1G PARALLEL 60FBGA 533-MT47H128M8CF-25E IT:H
IC DRAM 1G PARALLEL 60FBGA

IC DRAM 1G PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H128M8CF-25EIT:H-ND 774-MT47H128M8CF-25E IT:H MT47H128M8CF-25E IT:H MT47H128M8CF-25E IT:H MT47H128M8CF-25E IT:H 533-MT47H128M8CF-25E IT:H
Product Name Memory Memory IC and Storage Component Memory - SDRAM - MT47H128M8CF-25E IT:H Memory Memory Integrated Circuits (ICs) - Memory - Memory IC DRAM 1G PARALLEL 60FBGA
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type 60-TFBGA BGA; Tray BGA; 60-FBGA (8x10) BGA; 60-TFBGA BGA 60-TFBGA
Supply Voltage 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7 V ~ 1.9 V 1.7V ~ 1.9V -40degC ~ 95degC (TC) 1.8V
Access Time 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMSxxxxPxxxxx-xx/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory IC and Storage Component - 774-HYB25D256160BT-6 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details
SN54ACT3632 512 x 36 x 2 Synchronous Bidirectional FIFO Memory - SN54ACT3632HFP - Texas Instruments
Specs
Memory Category FIFO
Package Type CFP
View Details
4 suppliers