Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 2Gb (256M x 8)
Access Time: 450ps
Part Status: Obsolete (End Of Life)
Supplier Device Package: 60-FBGA (9x11.5)
Temperature Range - Operating: 0°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,320
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
IC DRAM 2GBIT PARALLEL 60FBGA Product overview: MT47H256M8EB-3:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H256M8EB-3:C
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-FBGA (9x11.5)
IC DRAM 2GBIT PARALLEL 60FBGA
IC DRAM 2GBIT PARALLEL 60FBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H256M8EB-3:C | MT47H256M8EB-3:C | MT47H256M8EB-3:C | MT47H256M8EB-3:C | MT47H256M8EB-3:C | |
| Product Name | Memory - SDRAM - MT47H256M8EB-3:C | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR2; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | |
| Cycle Time | 15 ns | 15 ns | 15 ns | |||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
