Micron Technology, Inc. Memory MT46V64M8BN-75:D TR

Description
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)
Description
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V64M8BN-75:D TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 60-FBGA (10x12.5)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT46V64M8BN-75:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V64M8BN-75:D TR
Integrated Circuits (ICs) - Memory - Memory MT46V64M8BN-75:D TR
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V64M8BN-75:D TR MT46V64M8BN-75:D TR MT46V64M8BN-75:D TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7500 ns 0.7500 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882578 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - 24C01-I/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
Memory - MT42C4256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details