Micron Technology, Inc. Memory MT47H128M4CB-37E:B

Description
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 267MHz 500ps 60-FBGA
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 267MHz 500ps 60-FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H128M4CB-37E:B-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 267MHz 500ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 267MHz 500ps 60-FBGA

Buy Now Datasheet
Memory IC and Storage Component - 774-MT47H128M4CB-37E:B - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT47H128M4CB-37E:B
Memory IC and Storage Component 774-MT47H128M4CB-37E:B
IC DRAM 512MBIT PAR 60FBGA Product overview: MT47H128M4CB-37E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H128M4CB-37E :B can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PAR 60FBGA Product overview: MT47H128M4CB-37E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H128M4CB-37E:B can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - MT47H128M4CB-37E:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT47H128M4CB-37E:B
Memory - SDRAM - MT47H128M4CB-37E:B
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 85°C (TC) Features: SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 267 MHz 500 ps 60-FBGA Package: Tray Package: 60-FBGA Mounting: Surface Mount Part Status: Obsolete Family Name: MT47H128M4 Categories: Integrated Circuits (ICs) Case / Package: 60-FBGA ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 1000 MSL Level: 5 (48 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0024

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 85°C (TC)
Features: SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 267 MHz 500 ps 60-FBGA
Package: Tray
Package: 60-FBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT47H128M4
Categories: Integrated Circuits (ICs)
Case / Package: 60-FBGA
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 5 (48 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0024

Buy Now Datasheet
Memory - MT47H128M4CB-37E:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 267 MHz 500 ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mbit Parallel 267 MHz 500 ps 60-FBGA

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H128M4CB-37E:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M4CB-37E:B
Integrated Circuits (ICs) - Memory - Memory MT47H128M4CB-37E:B
IC DRAM 512MBIT PAR 60FBGA

IC DRAM 512MBIT PAR 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H128M4CB-37E:B-ND 774-MT47H128M4CB-37E:B MT47H128M4CB-37E:B MT47H128M4CB-37E:B MT47H128M4CB-37E:B
Product Name Memory Memory IC and Storage Component Memory - SDRAM - MT47H128M4CB-37E:B Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-FBGA BGA; Tray BGA; 60-FBGA BGA; 60-FBGA BGA
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