IC DRAM 2GBIT PARALLEL 60FBGA Product overview: MT47H512M4EB-3:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H512M4EB-3:C
Series: *
Categories: Memory
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-FBGA (9x11.5)
IC DRAM 2GBIT PARALLEL 60FBGA
IC DRAM 2GBIT PARALLEL 60FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H512M4EB-3:C | MT47H512M4EB-3:C | MT47H512M4EB-3:C | MT47H512M4EB-3:C | |
| Product Name | Memory IC and Storage Component | Memory - DDR - MT47H512M4EB-3:C | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | ||
| Cycle Time | 15 ns | 15 ns | |||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) |
