Micron Technology, Inc. Memory MT47H512M4EB-187E:C

Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 533 MHz 350 ps 60-FBGA (9x11.5)
Datasheet
Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 533 MHz 350 ps 60-FBGA (9x11.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H512M4EB-187E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 533 MHz 350 ps 60-FBGA (9x11.5)

SDRAM - DDR2 Memory IC 2Gbit Parallel 533 MHz 350 ps 60-FBGA (9x11.5)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H512M4EB-187E:C
Integrated Circuits (ICs) - Memory - Memory MT47H512M4EB-187E:C
IC DRAM 2GBIT PAR 60FBGA

IC DRAM 2GBIT PAR 60FBGA

Supplier's Site
IC DRAM 2GBIT PARALLEL 60FBGA

IC DRAM 2GBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H512M4EB-187E:C MT47H512M4EB-187E:C MT47H512M4EB-187E:C
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.3500 ns 0.3500 ns
Operating Temperature 0 to 85 C (32 to 185 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-4369-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - AS4DDR232M72A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details