Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT47R512M4EB-25E:C

Description
IC DRAM 2GBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 2GBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47R512M4EB-25E:C
Integrated Circuits (ICs) - Memory - Memory MT47R512M4EB-25E:C
IC DRAM 2GBIT PARALLEL 60FBGA

IC DRAM 2GBIT PARALLEL 60FBGA

Supplier's Site
Memory - MT47R512M4EB-25E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)

SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 60FBGA

IC DRAM 2GBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47R512M4EB-25E:C MT47R512M4EB-25E:C MT47R512M4EB-25E:C
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz
Cycle Time 15 ns
Density 2000000 kbits 2000000 kbits 2000000 kbits
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