Micron Technology, Inc. Memory MT47R512M4EB-25E:C

Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)
Datasheet
Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47R512M4EB-25E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)

SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47R512M4EB-25E:C
Integrated Circuits (ICs) - Memory - Memory MT47R512M4EB-25E:C
IC DRAM 2GBIT PARALLEL 60FBGA

IC DRAM 2GBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 2GBIT PARALLEL 60FBGA

IC DRAM 2GBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47R512M4EB-25E:C MT47R512M4EB-25E:C MT47R512M4EB-25E:C
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.4000 ns 0.4000 ns
Operating Temperature 0 to 85 C (32 to 185 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits
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