Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT47R512M4EB-25E:C

Description
IC DRAM 2GBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 2GBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47R512M4EB-25E:C
Integrated Circuits (ICs) - Memory - Memory MT47R512M4EB-25E:C
IC DRAM 2GBIT PARALLEL 60FBGA

IC DRAM 2GBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 2GBIT PARALLEL 60FBGA

IC DRAM 2GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT47R512M4EB-25E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)

SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47R512M4EB-25E:C MT47R512M4EB-25E:C MT47R512M4EB-25E:C
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz
Cycle Time 15 ns
Density 2000000 kbits 2000000 kbits 2000000 kbits
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