Micron Technology, Inc. Memory MT47H256M8THN-3 IT:H

Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 63-FBGA (8x10)
Datasheet
Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 63-FBGA (8x10)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H256M8THN-3 IT:H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 63-FBGA (8x10)

SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 63-FBGA (8x10)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H256M8THN-3 IT:H
Integrated Circuits (ICs) - Memory - Memory MT47H256M8THN-3 IT:H
IC DRAM 2GBIT PARALLEL 63FBGA

IC DRAM 2GBIT PARALLEL 63FBGA

Supplier's Site
IC DRAM 2GBIT PARALLEL 63FBGA

IC DRAM 2GBIT PARALLEL 63FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H256M8THN-3 IT:H MT47H256M8THN-3 IT:H MT47H256M8THN-3 IT:H
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.4500 ns 0.4500 ns
Operating Temperature -40 to 95 C (-40 to 203 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits
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