IC DRAM 512MBIT PARALLEL 84FBGA Product overview: MT47H32M16NF-25E AAT:H from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H32M16NF-25E
Manufacturer: Micron Technology Inc.
Packaging: Bulk
Operating Temperature Range: -40°C ~ 105°C (TC)
Package: 84-TFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 400ps
Family Name: MT47H32M16
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-FBGA (8x12.5)
Alternative Parts (Cross-Reference): HYB18TC512160CF-25F;
Introduction Date: April 28, 2014
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 400MHz 400ps 84-FBGA (8x12.5)
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
IC DRAM 512MBIT PARALLEL 84FBGA
IC DRAM 512MBIT PARALLEL 84FBGA
DRAM, 32M X 16BIT, -40 TO 105DEG C; DRAM Type:DDR2; DRAM Density:512Mbit; DRAM Memory Configuration:32M x 16bit; Clock Frequency:400MHz; Memory Case Style:TFBGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes
DRAM, 32M X 16BIT, -40 TO 105DEG C ROHS COMPLIANT: YES
IC DRAM 512MBIT PARALLEL 84FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H32M16NF-25E AAT:H | MT47H32M16NF-25EAAT:H-ND | MT47H32M16NF-25E AAT:H | MT47H32M16NF-25E AAT:H | MT47H32M16NF-25E AAT:H | 80AH8127 | 51AK1373 | MT47H32M16NF-25E AAT:H | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H32M16NF-25E AAT:H | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Dram, 32M X 16Bit, -40 To 105Deg C; Dram Type Micron | Dram, 32M X 16Bit, -40 To 105Deg C Rohs Compliant Micron | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR2; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 2.5 ns | 0.4000 ns | |||
| Cycle Time | 15 ns | 15 ns | 0.4000 ns | ||||||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
