Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: 0°C ~ 85°C (TC)
Fake Threat In the Open Market: 42 pct.
MSL Level: 3 (168 Hours)
Mfr: Micron Technology Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (9x12.5)
Base Product Number: MT47H128M16
Technology: SDRAM - DDR2
Mounting Type: Surface Mount
HTSUS: 8542.32.0036
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 1.7V ~ 1.9V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 2Gbit
Memory Organization: 128M x 16
Memory Interface: Parallel
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400 ps
IC DRAM 2GBIT PARALLEL 84FBGA Product overview: MT47H128M16RT-25E:C TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H128M16RT-25
SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 400MHz 400ps 84-FBGA (9x12.5)
SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 400MHz 400ps 84-FBGA (9x12.5)
SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 400MHz 400ps 84-FBGA (9x12.5)
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 84-FBGA (9x12.5)
IC DRAM 2GBIT PARALLEL 84FBGA
IC DRAM 2GBIT PARALLEL 84FBGA
FBGA-84(9x12.5) DDR SDRAM ROHS
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H128M16RT-25E:C TR | 557-1919-6-ND | MT47H128M16RT-25E:C TR | MT47H128M16RT-25E:C TR | MT47H128M16RT-25E:C TR | MT47H128M16RT-25E:C TR | |
| Product Name | Integrated Circuits (ICs) - Memory - Memory | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory >> DDR SDRAM |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | |||
| Cycle Time | 15 ns | 15 ns | 15 ns | ||||
| Operating Temperature | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | |||
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | Surface Mount |
