IC DRAM 2GBIT PARALLEL 60FBGA Product overview: MT47H256M8EB-25E XIT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H256M8EB-25E
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 2Gb (256M x 8)
Access Time: 400ps
Part Status: Last Time Buy
Supplier Device Package: 60-FBGA (9x11.5)
Temperature Range - Operating: -40°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Low
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,320
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
Part Number Series: MT47H256M8
IC DRAM 2GBIT PARALLEL 60FBGA
IC DRAM 2GBIT PARALLEL 60FBGA
DRAM, 256M X 8BIT, -40 TO 95DEG C; DRAM Type:DDR2; DRAM Density:2Gbit; DRAM Memory Configuration:256M x 8bit; Clock Frequency:400MHz; Memory Case Style:FBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:-; Product Range:-RoHS Compliant: Yes
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H256M8EB-25E XIT:C | MT47H256M8EB-25E XIT:C | MT47H256M8EB-25E XIT:C | 80AH8125 | MT47H256M8EB-25E XIT:C | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H256M8EB-25E XIT:C | Integrated Circuits (ICs) - Memory - Memory | Memory | Dram, 256M X 8Bit, -40 To 95Deg C; Dram Type Micron | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | ||
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |||
| Package Type | BGA; Tray | FBGA | BGA; 60-TFBGA |
