SDRAM - Mobile LPSDR Memory IC 512Mbit Parallel 166 MHz 5 ns 54-VFBGA (6x9)
IC DRAM 512MBIT PARALLEL 54VFBGA
IC DRAM 512MBIT PAR 54VFBGA
| Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT48H32M16LFBF-6:B TR | MT48H32M16LFBF-6:B TR | MT48H32M16LFBF-6:B TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5 ns | 5 ns | |
| Operating Temperature | 0 to 70 C (32 to 158 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
