IC DRAM 512MBIT PAR 60FBGA Product overview: MT47H64M8CB-37E IT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H64M8CB-37E IT:B can be used for catalog matching and distributor lookup.
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 500ps
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 95°C (TC)
Case / Package: 60-FBGA
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 267MHz
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 267MHz 500ps 60-FBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 267 MHz 500 ps 60-FBGA
IC DRAM 512MBIT PAR 60FBGA
IC DRAM 512MBIT PARALLEL 60FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT47H64M8CB-37E IT:B | MT47H64M8CB-37EIT:B-ND | MT47H64M8CB-37E IT:B | MT47H64M8CB-37E IT:B | MT47H64M8CB-37E IT:B | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT47H64M8CB-37E IT:B | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.5000 ns | 0.5000 ns | 0.5000 ns | 0.5000 ns | ||
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) |
