The MT48H4M32LFB5-6:K is a 128Mb Mobile Low-Power SDR SDRAM memory chip from Quarktwin Technology Ltd. It operates at a voltage range of 1.7V to 1.95V and features fully synchronous operation with all signals registered on the positive edge of the system clock. The memory architecture includes 4 internal banks, allowing for concurrent operations, and supports programmable burst lengths of 1, 2, 4, 8, and continuous. This memory chip includes features such as auto precharge, concurrent auto precharge, auto refresh, and self-refresh modes. It is LVTTL-compatible and has an on-chip temperature sensor to control the self-refresh rate. The device also supports partial-array self-refresh (PASR) and deep power-down (DPD) modes, enhancing its power efficiency. The MT48H4M32LFB5-6:K is available in a 90-ball VFBGA package measuring 8mm x 13mm and is suitable for commercial temperature ranges from 0¬8C to +70¬8C. The timing specifications indicate a cycle time of 7.5ns at CL = 3, with an access time of 5.4ns. This product is ideal for applications requiring low power consumption and high performance in mobile devices.
IC DRAM 128MBIT PAR 90VFBGA Product overview: MT48H4M32LFB5-6:K from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT48H4M32LFB5-6:
SDRAM - Mobile LPSDR Memory IC 128Mb (4M x 32) Parallel 166MHz 5ns 90-VFBGA (8x13)
Series: *
Categories: Memory
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 166 MHz 5 ns 90-VFBGA (8x13)
IC DRAM 128MBIT PAR 90VFBGA
IC DRAM 128MBIT PARALLEL 90VFBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT48H4M32LFB5-6:K | MT48H4M32LFB5-6:K-ND | MT48H4M32LFB5-6:K | MT48H4M32LFB5-6:K | MT48H4M32LFB5-6:K | |
| Product Name | Memory IC and Storage Component | Memory | Memory - Unclassified Memory - MT48H4M32LFB5-6:K | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 5 ns | 5 ns | 5 ns | |||
| Cycle Time | 15 ns | 15 ns | ||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
