Micron Technology, Inc. Memory - DDR - MT47H256M8EB-25E AIT:C MT47H256M8EB-25E AIT:C

Description
Series: * Categories: Memory
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Description
Series: * Categories: Memory
Request a Quote Datasheet

Suppliers

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Product
Description
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Memory - DDR - MT47H256M8EB-25E AIT:C -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - MT47H256M8EB-25E AIT:C
Memory - DDR - MT47H256M8EB-25E AIT:C
Series: * Categories: Memory

Series: *
Categories: Memory

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Memory IC and Storage Component - 774-MT47H256M8EB-25E AIT:C - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT47H256M8EB-25E AIT:C
Memory IC and Storage Component 774-MT47H256M8EB-25E AIT:C
IC DRAM 2GBIT PARALLEL 60FBGA Product overview: MT47H256M8EB-25E AIT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H256M8EB-25E AIT:C can be used for catalog matching and distributor lookup.

IC DRAM 2GBIT PARALLEL 60FBGA Product overview: MT47H256M8EB-25E AIT:C from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT47H256M8EB-25E AIT:C can be used for catalog matching and distributor lookup.

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H256M8EB-25E AIT:C
Integrated Circuits (ICs) - Memory - Memory MT47H256M8EB-25E AIT:C
IC DRAM 2GBIT PARALLEL 60FBGA

IC DRAM 2GBIT PARALLEL 60FBGA

Supplier's Site
Dram, 256M X 8Bit, -40 To 95Deg C; Dram Type Micron - 80AH8124 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 256M X 8Bit, -40 To 95Deg C; Dram Type Micron
80AH8124
Dram, 256M X 8Bit, -40 To 95Deg C; Dram Type Micron 80AH8124
DRAM, 256M X 8BIT, -40 TO 95DEG C; DRAM Type:DDR2; DRAM Density:2Gbit; DRAM Memory Configuration:256M x 8bit; Clock Frequency:400MHz; Memory Case Style:FBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes

DRAM, 256M X 8BIT, -40 TO 95DEG C; DRAM Type:DDR2; DRAM Density:2Gbit; DRAM Memory Configuration:256M x 8bit; Clock Frequency:400MHz; Memory Case Style:FBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes

Supplier's Site
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)

SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)

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IC DRAM 2GBIT PARALLEL 60FBGA

IC DRAM 2GBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT47H256M8EB-25E AIT:C MT47H256M8EB-25E AIT:C 80AH8124 MT47H256M8EB-25E AIT:C MT47H256M8EB-25E AIT:C
Product Name Memory - DDR - MT47H256M8EB-25E AIT:C Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Dram, 256M X 8Bit, -40 To 95Deg C; Dram Type Micron Memory Memory
Memory Category Volatile; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.4000 ns 2.5 ns 0.4000 ns 0.4000 ns
Cycle Time 15 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Package Type BGA; Tray FBGA BGA; 60-TFBGA
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