Micron Technology, Inc. Memory MT47H16M16BG-37V:B

Description
IC DRAM 256MBIT PARALLEL 84FBGA
Datasheet
Description
IC DRAM 256MBIT PARALLEL 84FBGA
Datasheet

Suppliers

Company
Product
Description
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IC DRAM 256MBIT PARALLEL 84FBGA

IC DRAM 256MBIT PARALLEL 84FBGA

Supplier's Site Datasheet
Memory - MT47H16M16BG-37V:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 256Mbit Parallel 267 MHz 500 ps 84-FBGA (8x14)

SDRAM - DDR2 Memory IC 256Mbit Parallel 267 MHz 500 ps 84-FBGA (8x14)

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Integrated Circuits (ICs) - Memory - Memory - MT47H16M16BG-37V:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H16M16BG-37V:B
Integrated Circuits (ICs) - Memory - Memory MT47H16M16BG-37V:B
IC DRAM 256MBIT PAR 84FBGA

IC DRAM 256MBIT PAR 84FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H16M16BG-37V:B MT47H16M16BG-37V:B MT47H16M16BG-37V:B
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.5000 ns 0.5000 ns
Density 256000 kbits 256000 kbits 256000 kbits
Operating Temperature 0 to 85 C (32 to 185 F)
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