Micron Technology, Inc. Memory MT47H512M4THN-25E:M TR

Description
IC DRAM 2GBIT PARALLEL 63FBGA
Datasheet
Description
IC DRAM 2GBIT PARALLEL 63FBGA
Datasheet

Suppliers

Company
Product
Description
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IC DRAM 2GBIT PARALLEL 63FBGA

IC DRAM 2GBIT PARALLEL 63FBGA

Supplier's Site Datasheet
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 63-FBGA (8x10)

SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 63-FBGA (8x10)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H512M4THN-25E:M TR
Integrated Circuits (ICs) - Memory - Memory MT47H512M4THN-25E:M TR
IC DRAM 2GBIT PARALLEL 63FBGA

IC DRAM 2GBIT PARALLEL 63FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H512M4THN-25E:M TR MT47H512M4THN-25E:M TR MT47H512M4THN-25E:M TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns
Density 2000000 kbits 2000000 kbits 2000000 kbits
Operating Temperature 0 to 85 C (32 to 185 F)
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