Micron Technology, Inc. Memory MT47H512M4THN-25E:M TR

Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 63-FBGA (8x10)
Datasheet
Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 63-FBGA (8x10)
Datasheet

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Product
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SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 63-FBGA (8x10)

SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 63-FBGA (8x10)

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IC DRAM 2GBIT PARALLEL 63FBGA

IC DRAM 2GBIT PARALLEL 63FBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H512M4THN-25E:M TR
Integrated Circuits (ICs) - Memory - Memory MT47H512M4THN-25E:M TR
IC DRAM 2GBIT PARALLEL 63FBGA

IC DRAM 2GBIT PARALLEL 63FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H512M4THN-25E:M TR MT47H512M4THN-25E:M TR MT47H512M4THN-25E:M TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns
Operating Temperature 0 to 85 C (32 to 185 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits
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