Micron Technology, Inc. Memory MT47H64M8CB-3:B TR

Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-FBGA
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H64M8CB-3:BTR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-FBGA

Buy Now Datasheet
Memory - MT47H64M8CB-3:B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-FBGA

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT47H64M8CB-3:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT47H64M8CB-3:B TR
Integrated Circuits (ICs) - Memory - Memory MT47H64M8CB-3:B TR
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT47H64M8CB-3:BTR-ND MT47H64M8CB-3:B TR MT47H64M8CB-3:B TR MT47H64M8CB-3:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-FBGA BGA; 60-FBGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27S13A/BEA - Quarktwin Technology Ltd.
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 40 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - A2C00058602 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register - CD40105BF3A - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP,DIESALE
View Details
4 suppliers