Microchip Technology, Inc. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| A family of 600V Superjunction MOSFETs available in a variety of current and package options. Additional Features Ultra Low RDS(on) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy... | |
| A family of 650V Superjunction MOSFETs available in a variety of current and package options Additional Features Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy... | |
| A family of 800V Superjunction MOSFETs available in a variety of current and package options. Additional Features Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy... | |
| DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities... | |
| DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities... | |
| DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of... | |
| DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of... | |
| DN3145 is a depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors... | |
| DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of... | |
| Fully designed, tested and qualified in Europe, ATMX150RHA is a mixed-signal Technology offer that provides high-performance and high-density solutions for Aerospace and Defense applications. ATMX150RHA covers a digital offer and... | |
| HT0440 is a dual, high voltage, isolated MOSFET driver utilizing proprietary HVCMOS® technology. It is designed to drive discrete MOSFETs configured as bidirectional or unidirectional switches. It can drive N-channel... | |
| HT0740 is a single channel, high voltage, low input current, isolated driver utilizing proprietary HVCMOS® technology. It is designed to drive discrete MOSFETs, configured as high side switches, up to... | |
| Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering... | |
| Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These... | |
| Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for... | |
| The DN2470 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities... | |
| The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities... | |
| The EMC1046/EMC1047 are high accuracy, low cost, SMBus / I2C temperature sensors. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to CPU diodes requiring the BJT or transistor... | |
| The EMC1046/EMC1047 are high accuracy, low cost, System Management Bus (SMBus) temperature sensors. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to CPU diodes requiring the BJT or... | |
| The EMC1402 is a high accuracy, low cost, System Management Bus (SMBus) temperature sensor. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to support CPU diodes requiring the... | |
| The EMC1403 and EMC1404 are high accuracy, low cost, System Management Bus (SMBus) temperature sensors. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to support CPU diodes requiring... | |
| The EMC1412 is a high accuracy, low cost, System Management Bus (SMBus) temperature sensor. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to support CPU diodes requiring the... | |
| The EMC1413/EMC1414 are high accuracy, low cost, System Management Bus (SMBus) temperature sensors. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to support CPU diodes requiring the BJT/transistor... | |
| The EMC1422 is a high accuracy, low cost, System Management Bus (SMBus) temperature sensor. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to support CPU diodes requiring the... | |
| The EMC1423 and EMC1424 are high accuracy, low cost, System Management Bus (SMBus) temperature sensors. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to support CPU diodes requiring... | |
| The EMC1428 is a high accuracy, low cost, System Management Bus (SMBus) temperature sensor. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to CPU diodes requiring the BJT... | |
| The EMC1438 is a high accuracy, low cost, System Management Bus (SMBus) temperature sensor. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to CPU diodes requiring the BJT... | |
| The EMC1812 is a 1.8V, 2 channel, high accuracy, 2-Wire (I2C compatible) temperature sensor. Advanced features such as Rate of Change, Resistance Error Correction (REC), Beta Compensation (to... | |
| The EMC1822 is a 1.8V, 2 channel, high accuracy, 2-Wire (I2C compatible) temperature sensor. Advanced features such as Rate of Change, Resistance Error Correction (REC), Beta Compensation (to... | |
| The EMC1823 is a 1.8V, 3 channel, high accuracy, 2-Wire (I2C compatible) temperature sensor. Advanced features such as Rate of Change, Shutdown, Resistance Error Correction (REC), Beta Compensation... | |
| The EMC1824 is a 1.8V, 4 channel, high accuracy, 2-Wire (I2C compatible) temperature sensor. Advanced features such as Rate of Change, Shutdown, Resistance Error Correction (REC), Beta Compensation... | |
| The EMC1825 is a 1.8V, 5 channel, high accuracy, 2-Wire (I2C compatible) temperature sensor. Advanced features such as Rate of Change, Shutdown, Resistance Error Correction (REC), Beta Compensation... | |
| The EMC1843 is a 1.8V, 3 channel, high accuracy, 2-Wire (I2C compatible) temperature sensor. Advanced features such as Rate of Change, Shutdown, Resistance Error Correction (REC), Beta Compensation... | |
| The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each temperature channel has programmable high limits that can... | |
| The EMC2103 is an SMBus compliant fan controller with up to up to 3 external and 1 internal temperature channels. The fan driver can be operated using two methods each... | |
| The EMC2104 is an SMBus compliant fan controller with up to five (4 external and 1 internal) temperature channels. The fan drivers can be operated using two methods each with... | |
| The EMC2105 is an SMBus compliant fan controller with up to five (up to 4 external and 1 internal) temperature channels. The fan driver can be operated using two methods... | |
| The EMC2106 is an SMBus compliant fan controller with up to five (up to 4 external and 1 internal) temperature channels. The fan drivers can be operated using two methods... | |
| The EMC2112 is an SMBus, closed-loop, RPM-based fan driver with hardware (HW) thermal shutdown and reset controller. The EMC2112 offers a single High Side fan driver capable of sourcing up... | |
| The EMC2113 is an SMBus compliant fan controller. The fan driver can be operated using two methods, each with two modes. The methods include an RPM-based Fan Speed Control Algorithm... | |
| The HV7322 is an 8-channel, true 5-Level or pseudo 7-Level, high voltage pulser with integrated dual T/R switches. It is designed for medical ultrasound or nondestructive testing (NDT) applications. The... | |
| The MCP1403/4/5 devices are a family of 4.5A,dual output buffers/MOSFET drivers. As MOSFET drivers, the MCP1403/4/5 can easily charge 2200 pF gate capacitance in under 28 nsec (max).The inputs are... | |
| The MCP1406/07 devices are a family of buffers/MOSFET drivers that feature a single-output with 6A peak drive current capability, low shoot-through current, matched rise/fall times and propagation delay times. These... | |
| The MCP14628 is a synchronous MOSFET driver used for driving MOSFETs in a rectified bridge arrangement. This type of arrangement is typical of synchronous buck converter topologies.There are two separate... | |
| The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET. The MCP14700 has two PWM inputs to allow independent control of the... | |
| The MCP14E3/E4/E5 devices are a family of 4.0 A, dual output MOSFET drivers with separate enable functions for each output. As MOSFET drivers, the MCP14E3/E4/E5 can charge 2200 pF gate... | |
| The MCP14E3/E4/E5 devices are a family of 4.0A, dual output MOSFET drivers with separate enable functions for each output. As MOSFET drivers, the MCP14E3/E4/E5 can charge 2200 pF gate capacitance... | |
| The MCP14E6/E7/E8 devices are a family of 2A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E6/E7/E8 can charge 1000 pF gate capacitance in... | |
| The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in... | |
| The MCP73871 device is a 1A fully integrated linear solution for system load sharing and Li-Ion / Li-Polymer battery charge management with AC-DC wall adapter and USB port power sources... | |
| The MTD6502B is a 3-phase full-wave driver for brushless sensorless DC motors. They feature 180° sinusoidal drive, high torque output, and silent drive. Due to their adaptive features and wide... | |
| The TC1410/1410N are 0.5A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V... | |
| The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V... | |
| The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V... | |
| The TC1413/1413N are 3A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V... | |
| The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25mV of ground or... | |
| The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made... | |
| The TC4421A is a high speed, high current, rugged, and effi cient MOSFET driver. The TC4421A is an inverting driver. This device is intended to improve upon the current TC4421... | |
| The TC4422A is a high speed, high current, rugged, and effi cient MOSFET driver. The TC4422A is an non-inverting driver. This device is intended to improve upon the current TC4422... | |
| The TC4423A/4424A/4425A are a family of dual, 3A-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFET transistors and Insulated Gate Bipolar Transistors (IGBT).The TC4423A/4424A/4425A have matched leading... | |
| The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and... | |
| The TC4426A/4427A/4428A are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and... | |
| The TC4431/4432 are 30V CMOS buffer/drivers suitable for use in high-side driver applications. They will not latch up under any conditions within their power and voltage ratings. They can accept,... | |
| The TC4451/52 are single-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transisitors (IGBT). Their high drive current of over 12A is capable... | |
| These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the... | |
| These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and... | |
| This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with... | |
| This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors... | |
| This low threshold, depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar... | |
| Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a... | |
| Very low power CMOS static RAM organized as 512K by 8 bits for applications in aerospace electronics, portable instruments, or embarked systems.Utilizing an array of six transistors (6T) memory cells,... | |
| Very low power CMOS static RAM organized as 8192 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a... |
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