Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.
Body Diode Options MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.
Additional Features
Class D amplifiers up to 2MHz
High voltage pulsed DC
AM transmitters
Plasma deposition/etch
Series Gate Resistance (Rg) <0.1 ohm
Tr and Tf times of <10ns
Industry's Lowest Gate Charge
Fast switching, uniform signal propagation
Pulse power applications
Fast switching, reduced gate drive power
Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.
Additional Features
- Class D amplifiers up to 2MHz
- High voltage pulsed DC
- AM transmitters
- Plasma deposition/etch
- Series Gate Resistance (Rg) <0.1 ohm
- Tr and Tf times of <10ns
- Industry's Lowest Gate Charge
- Fast switching, uniform signal propagation
- Pulse power applications
- Fast switching, reduced gate drive power
