Microchip Technology, Inc. AT65609EHV

Description
Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 40ns over the full military temperature range. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000.
Datasheet
Description
Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 40ns over the full military temperature range. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000.
Datasheet

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 - AT65609EHV - Microchip Technology, Inc.
Chandler, AZ, United States
Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 40ns over the full military temperature range. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000.

Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 40ns over the full military temperature range. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000.

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Technical Specifications

  Microchip Technology, Inc.
Product Category Transistors
Product Number AT65609EHV
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