Microchip Technology, Inc. Single Bipolar Transistors JAN2N2221AUB

NPN silicon switching transistor in a 4-pin surface mount UB package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.5 W at +25°C. The device meets MIL-PRF-19500/255 qualification with a junction temperature range of -65 to +200°C. Thermal resistance junction-to-ambient is 325 °C/W. Collector-emitter saturation voltage is 0.3 Vdc at 150 mA collector current and 15 mA base current. Forward current transfer ratio ranges from 40 to 120 at 150 mA collector current. Input and output capacitances are 25 pF and 8.0 pF respectively.