The DN2625 is a single N-channel depletion-mode vertical DMOS FET designed for source-driven applications and inductive loads, such as medical ultrasound beamforming and piezoelectric transducer drivers. It is packaged in a TO-252 D-PAK package with a thermal resistance of 81 °C/W. The device has a drain-to-source breakdown voltage of 250 V, a gate-to-source off voltage of -1.5 V to -2.1 V, and a saturated drain current of 1.1 A at 0 V gate-source voltage. It exhibits a positive temperature coefficient and is free from thermal runaway. The maximum operating ambient and storage temperatures are -55°C to 150°C. The part is RoHS-compliant and Pb-free.
DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. The DN2625DK6-G contains two MOSFETs in an 8-lead, dual pad DFN package. The DN2625K6-G in the 14-lead QFN package is not recommended for new designs, but may continue to be purchased for existing designs.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN2625 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
