The DN2535 is a low-threshold, normally-on N-channel depletion-mode vertical DMOS FET designed for switching and amplifying applications requiring high breakdown voltage, high input impedance, and fast switching speeds. It is available in TO-92 and TO-220 packages, with a drain-to-source breakdown voltage of 350 V, a saturated drain current of 150 mA, and a static on-state resistance of 17 to 25 Ω at a gate-source voltage of 0 V. The device exhibits a positive temperature coefficient for threshold voltage, a maximum power dissipation of 1.0 W in TO-92 and 15 W in TO-220, and thermal resistance of 132 °C/W and 29 °C/W respectively. It is RoHS compliant and operates from -55 °C to 150 °C.
DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN2535 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
