The DN3525 is a low-threshold N-channel depletion-mode vertical DMOS FET designed for switching and amplifying applications requiring high breakdown voltage, high input impedance, and fast switching speeds. It is packaged in a 3-lead SOT-89 with a maximum drain-to-source breakdown voltage of 250 V, a static drain-to-source on-state resistance of 6 Ω, and a saturated drain-to-source current of 300 mA. The device has a gate-to-source off voltage range of -1.5 V to -3.5 V and a temperature coefficient of -4.5 mV/°C for gate-to-source off voltage. It operates over an ambient temperature range of -55°C to +150°C and has a thermal resistance of 133 °C/W in the SOT-89 package.
DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN3525 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
