The DN3535 is a normally-on N-channel depletion-mode vertical DMOS FET designed for switching and amplification applications requiring high breakdown voltage, high input impedance, and fast switching speeds. It is packaged in a TO-243AA (SOT-89) case measuring 4.60 mm max length, 2.60 mm max width, and 1.60 mm max height. The device has a drain-to-source breakdown voltage of 350 V, a maximum continuous drain current of 230 mA, and a static on-state resistance of 10 Ω at 150 mA. It operates over a temperature range of -55°C to +150°C with a thermal resistance of 133°C/W on an FR4 board. The part is RoHS compliant and free from secondary breakdown. It meets JEDEC TO-243, Variation AA, Issue C specifications.
This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN3535 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
