The DN3135 is a low-threshold, normally-on N-channel depletion-mode vertical DMOS FET designed for switching and amplifying applications requiring high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. It is available in SOT-23 (TO-236AB) and SOT-89 (TO-243AA) packages, with maximum dimensions of 2.90×1.30×1.12 mm and 4.60×2.60×1.60 mm respectively. The device has a drain-to-source breakdown voltage of 350 V, a gate-to-source off voltage range of -1.5 V to -3.5 V, a static drain-to-source on-state resistance of up to 35 Ω, and a saturated drain current of 180 mA. It operates over an ambient temperature range of -55°C to +150°C, with thermal resistance of 203 °C/W for SOT-23 and 133 °C/W for SOT-89. The part meets RoHS compliance and is Pb-free.
DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN3135 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
