The DN2450 is an N-channel depletion-mode vertical DMOS FET designed for normally-on switching applications, battery-operated systems, and current/voltage limiting circuits. It is available in TO-252 (D-PAK) and TO-243AA (SOT-89) packages. The device has a drain-to-source breakdown voltage of 500 V, a static drain-to-source on-state resistance of 7.0 to 10 Ω, and a saturated drain-to-source current of 700 mA. It operates with a gate-to-source off voltage range of -1.5 to -3.5 V and features a positive temperature coefficient for thermal stability. The input capacitance ranges from 150 to 200 pF, and reverse recovery time is 800 ns. The operating temperature range is -55°C to +150°C.
These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN2450 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
