The DN2470 is an N-channel depletion-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high input impedance, and fast switching speeds. It is packaged in a TO-252 (D-PAK) case and has a drain-to-source breakdown voltage of 700 V, a static drain-to-source on-state resistance of 42 Ω, and a saturated drain current of 500 mA. The device operates from -55°C to +150°C with a thermal resistance of 132 °C/W. It meets RoHS and JEDEC e3 Pb-free standards.
The DN2470 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN2470 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
