Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors JAN2N3442

Description
Win Source Part Number: 1355857-JAN2N3442 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 200°C (TJ) Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) Mfr: Microchip Technology Series: Military, MIL-PRF-19500/370 Package: Bulk Product Status: Active Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA) Base Product Number: 2N3442 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Power - Max: 6 W
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Description
Win Source Part Number: 1355857-JAN2N3442 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 200°C (TJ) Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) Mfr: Microchip Technology Series: Military, MIL-PRF-19500/370 Package: Bulk Product Status: Active Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA) Base Product Number: 2N3442 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Power - Max: 6 W
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1355857-JAN2N3442 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1355857-JAN2N3442
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1355857-JAN2N3442
Win Source Part Number: 1355857-JAN2N3442 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 200°C (TJ) Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) Mfr: Microchip Technology Series: Military, MIL-PRF-19500/370 Package: Bulk Product Status: Active Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA) Base Product Number: 2N3442 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Power - Max: 6 W

Win Source Part Number: 1355857-JAN2N3442
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: -55°C ~ 200°C (TJ)
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
Mfr: Microchip Technology
Series: Military, MIL-PRF-19500/370
Package: Bulk
Product Status: Active
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3 (TO-204AA)
Base Product Number: 2N3442
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Power - Max: 6 W

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
JAN2N3442
Discrete Semiconductor Products - Transistors - Bipolar (BJT) JAN2N3442
TRANS NPN 140V 10A TO3

TRANS NPN 140V 10A TO3

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 1355857-JAN2N3442 JAN2N3442
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type TO-3; SOT3 MIL-PRF-19500/370
IC(max) 10000 milliamps 10000 milliamps
Power Gain 20 dB
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