Microchip Technology, Inc. Single Bipolar Transistors JAN2N2222AP

NPN silicon switching transistor qualified per MIL-PRF-19500/255, available in TO-18 package with a collector current rating of 800 mA and collector-emitter voltage of 50 Vdc. Power dissipation is 0.5 W for standard variants and 0.65 W for the AUA variant. Thermal resistance varies by package: 210 °C/W for AUA, 325 °C/W for others. Operating and storage junction temperature ranges from -65 °C to +200 °C. Current gain ranges from 30 to 325 depending on operating current, collector-emitter saturation voltage is 0.3 V at 150 mA collector current, and turn-on and turn-off times are 35 µs and 300 µs respectively.