The DN3765 is an N-Channel Depletion Mode Vertical DMOS FET from Microchip Technology, Inc. It features a high input impedance and low input capacitance, making it suitable for applications requiring fast switching speeds. The device has a maximum drain-to-source voltage of 650V and a maximum continuous drain current of 300mA. It exhibits low on-resistance of 8.0Oc and is free from thermal runaway and secondary breakdown, enhancing its reliability in various applications. The DN3765 is packaged in a TO-252 (D-PAK) format and is RoHS compliant. It is ideal for use in normally-on switches, solid-state relays, converters, linear amplifiers, and constant current sources.
This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN3765 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
