NPN silicon switching transistor qualified per MIL-PRF-19500/255, housed in a TO-18 (TO-206AA) package. It has a collector-emitter voltage rating of 50 Vdc, a collector current rating of 800 mAdc, and a total power dissipation of 0.5 W at +25°C. The thermal resistance junction-to-ambient is 325 °C/W. Operating and storage junction temperature range is from -65°C to +200°C. The transistor features a minimum DC current gain of 30 at 0.1 mA collector current and 40 at 10 mA collector current. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current. Turn-on time is 35 μs and turn-off time is 300 μs.
Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18 (TO-206AA)
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 150-JAN2N2221A-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |