The DN1509 is an N-channel depletion-mode vertical DMOS FET designed for normally-on switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is available in 5-lead SOT-23 and 3-lead TO-243AA (SOT-89) packages. The device has a drain-to-source breakdown voltage of 90 V, a static drain-to-source on-state resistance of up to 6.0 Ω at 200 mA, and a saturated drain current of 300 mA. It operates over a temperature range of -55°C to +150°C, with a gate-to-source off voltage ranging from -1.8 V to -3.5 V and a forward transconductance of 200 mmho. The input capacitance is specified up to 150 pF, and it is free from secondary breakdown and thermal runaway.
This low threshold, depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN1509 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
