The DN2530 is an N-channel depletion-mode vertical DMOS FET designed for normally-on switching and amplification applications requiring high breakdown voltage, low input capacitance, and fast switching speeds. It is available in TO-92 and TO-243AA (SOT-89) packages, with a maximum drain-to-source voltage rating of 300 V and a static on-state resistance of 12 Ω at 150 mA. The device exhibits a saturated drain current of 200 mA and a gate-to-source off voltage ranging from -1.0 V to -3.5 V, with a temperature coefficient of -4.5 mV/°C for gate-to-source off voltage and 1.1 %/°C for on-resistance. It has a maximum operating junction temperature of 150 °C, with thermal resistance of 132 °C/W for TO-92 and 133 °C/W for TO-243AA. The part meets RoHS compliance and is free from thermal runaway and secondary breakdown.
The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN2530 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
