The DN2540 is a low-threshold, normally-on, N-channel depletion-mode vertical DMOS FET designed for switching and amplifying applications requiring high breakdown voltage, high input impedance, and fast switching speeds. It is available in three packages: TO-92, TO-220, and TO-243AA (SOT-89), with drain-to-source breakdown voltage of 400 V, on-resistance of 17 to 25 Ω, and continuous drain current of 120 mA (TO-92), 500 mA (TO-220), or 170 mA (TO-243AA). Thermal resistance values are 132 °C/W (TO-92), 29 °C/W (TO-220), and 133 °C/W (TO-243AA). The device operates from -55 °C to +150 °C, is RoHS compliant, and meets JEDEC TO-92, TO-220, and TO-243AA package standards. Input capacitance is 200 to 300 pF, transconductance is 325 mmho, and it exhibits no thermal runaway or secondary breakdown.
DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN2540 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
