The DN3545 is an N-channel depletion-mode vertical DMOS FET designed for switching and amplifying applications requiring high breakdown voltage, high input impedance, and fast switching speeds. It is available in 3-lead TO-92 and 3-lead SOT-89 packages. The device has a drain-to-source breakdown voltage of 450 V, a static drain-to-source on-state resistance of 20 Ω, and a saturated drain-to-source current of 200 mA at 0 V gate-to-source voltage. It exhibits a gate-to-source off voltage range of -1.5 V to -3.5 V, with a temperature coefficient of -4.5 mV/°C. Thermal resistance is 132 °C/W for TO-92 and 133 °C/W for SOT-89. Operating and storage temperatures range from -55°C to +150°C. The device is free from thermal runaway and secondary breakdown, with a forward transconductance of 150 mmho, input capacitance of 360 pF, and turn-on delay and rise times of 20 ns and 30 ns respectively.
These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN3545 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
