The DN3145 is a depletion-mode N-channel vertical DMOS FET designed for switching and amplifying applications requiring high breakdown voltage, high input impedance, and fast switching speeds. It is packaged in a TO-243AA (SOT-89) case with dimensions up to 4.60 mm in length, 2.60 mm in width, and 1.60 mm in height. The device has a drain-to-source breakdown voltage of 450 V, a maximum on-resistance of 60 Ω, and a saturated drain current of 120 mA. It operates from -55°C to +150°C and is RoHS compliant. Thermal resistance is 133°C/W when mounted on an FR4 board. The part is free from thermal runaway and secondary breakdown.
DN3145 is a depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | DN3145 |
| Product Name | N-Channel Depletion Mode Vertical DMOS FET |
| Polarity | N-Channel |
